MRF19125S

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub–Micron MOSFET Line www.DataSheet4U.com RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Typical 2–Carrier N–CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 24 Watts Avg. Power Gain — 13.6 dB Efficiency — 22% ACPR — –51 dB IM3 — –37.0 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19125 MRF19125S MRF19125SR3 1990 MHz, 125 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B–03, STYLE 1 (NI–880) (MRF19125) CASE 465C–02, STYLE 1 (NI–880S) (MRF19125...