HN7G10FE

HN7G10FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G10FE Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 (transistor): 2SC5376F equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 15 12 5 400 50 Unit V V V mA mA 1. 2. 3. 4. 5. 6. EMITTER BASE DRAIN SOURCE GATE COLLECTOR Q2 (MOSFET) Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA ― ― 2-2J1A Weight: 0.003 g (typ.) Q1, Q2 Common Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol PC (Note 1) Tj Tstg Rating 100 150 −55~150 Unit mW °C °C Note 1: Total rating Marking Type Name hFE Rank Pin Assignment (top view) 6 5 4 78A Q1 Q2 1 2 3 1 2005-03-29 HN7G10FE Q1 (transistor) Electrical Characteristics (Ta = 25°C) www.DataSheet4U.com Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO Test Condition VCB = 15 V, IE = 0 VEB = 5 V, IC = 0 Min Typ. Max 0.1 0.1 1000 30 250 1.2 mV V Unit ⎯ ⎯ 300 ⎯ ⎯ ⎯ 15 110 0.87 µA µA hFE (Note 2) VCE = 2 V, IC = 10 mA VCE (sat) (1) VCE (sat) ...