HN7G01FU
Preliminary
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TOSHIBA Multi Chip Discrete Device
HN7G01FU
Unit: mm
Power Management Switc...
HN7G01FU
Preliminary
www.DataSheet4U.com
TOSHIBA Multi Chip Discrete Device
HN7G01FU
Unit: mm
Power Management Switch Application Driver Circuit Application Interface Circuit Application
Q1 (
transistor): 2SA1955 equivalent Q2 (MOS-FET): 2SK1830 equivalent
Q1 (
transistor) Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA
Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA
JEDEC JEITA TOSHIBA Weight: 6.8 mg (typ.)
― ― ―
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristics Power dissipation Junction temperature Storage temperature range Symbol PC (Note 1) Tj Tstg Rating 200 125 −55~150 Unit mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate,...