TC2997D

www.DataSheet4U.com TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES 20W Typical Power at 2.45 GHz 10dB Typical Linear Power Gain at 2.45 GHz High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 40 % Suitable for High Reliability Application Wg = 50 mm 100 % DC and RF Tested PHOTO ENLARGEMENT Flange Ceramic Package DESCRIPTION The TC2997D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS ( VDS = 10.5V, IDS = 5A @ 2.45GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth Linear Power Gain Intercept Point of the 3rd-order Intermodulation *PSCL = 32 dBm Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 CONDITIONS Output Power at 1dB Gain Compression Point MIN 42 9 TYP 43 10 52 40 12.5 9000 -1.7 22 0.9 MAX UNIT dBm dB dBm % A mS Volts Volts °C/W * PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial...