2N6264

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·A wide variety of medium-to-high power, high-voltage applications ·Series and shunt regulators ·High-fidelity amplifiers ·Power switching circuits ·Solenoid drivers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6263 2N6264 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2N6263 2N6264 2N6263 2N6264 CONDITIONS Open emitter VALUE 140 170 120 150 7 3 4 2 2N6263 2N6264 TC=25 20 50 150 -65~200 UNIT V VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Open base Open collector V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case 2N6263 2N6264 MAX 8.75 3.5 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6263 IC=0.1 A ; IB=0 2N6264 2N6263 2N6264 2N6263 VBE Base -emitter on voltage 2N6264 2N6263 ICEX Collector cut-off current 2N6264 2N6263 ICEO Collector cut-off current 2N6264 2N6263 IEBO Emitter cut-off current 2N6264 2N6263 hFE-1 DC current gain 2N6264 2N6263 hFE-2 DC current gain 2N...