FAST IGBT IN NPT-TECHNOLOGY
SKW15N120
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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower ...
Description
SKW15N120
www.DataSheet4U.com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
40lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
C
G
E
P-TO-247-3-1 (TO-247AC)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW15N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 °C
1)
VCE 1200V
IC 15A
Eoff 1.5mJ
Tj 150°C
Package TO-247AC
Ordering Code Q67040-S4281
Symbol VCE IC
Value 1200 30 15
Unit V A
ICpul s IF
52 52
32 15 IFpul s VGE tSC Ptot 50 ±20 10 198 V µs W
VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
Power Semiconductors
SKW15N120
www.DataSheet4U.com
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, jun...
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