N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP02N90P
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronic...
Description
www.DataSheet4U.com
AP02N90P
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ Simple Drive Requirement Low On-resistance Fast Switching Characteristics
G D
BVDSS RDS(ON) ID
S
900V 7.2£[ 1.9A
D
TO-220
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC converters for power applications.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 900 ±30 1.9 1.2 6 62.5 0.5
2
Units V V A A A W W/¢J mJ A ¢J ¢J
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
18 1.9 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Units ¢J /W ¢J /W
Data & specifications subject to change without notice
200418062-1/4
AP02N90P www.DataSheet4U.com
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
£GB VDSS/£G Tj
o
Parameter Drain-Source Breakdown ...
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