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E53NC50 Dataheets PDF



Part Number E53NC50
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STE53NC50
Datasheet E53NC50 DatasheetE53NC50 Datasheet (PDF)

www.DataSheet4U.com N-CHANNEL 500V - 0.070Ω - 53A ISOTOP PowerMesh™II MOSFET TYPE STE53NC50 n n n n n STE53NC50 VDSS 500V RDS(on) < 0.08Ω ID 53 A TYPICAL RDS(on) = 0.07 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for wha.

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www.DataSheet4U.com N-CHANNEL 500V - 0.070Ω - 53A ISOTOP PowerMesh™II MOSFET TYPE STE53NC50 n n n n n STE53NC50 VDSS 500V RDS(on) < 0.08Ω ID 53 A TYPICAL RDS(on) = 0.07 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ISOTOP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER n ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj May 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 53 33 212 460 3.68 3 2500 – 65 to 150 150 (1) ISD≤ 53A, di/dt ≤100 A/µs, VDD≤ 24V, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns V °C °C 1/8 (•)Pulse width limited by safe operating area STE53NC50 www.DataSheet4U.com THERMAL DATA Rthj-case Rthc-h Thermal Resistance Junction-case Max 0.272 0.05 °C/W °C/W Thermal Resistance Case-heatsink with Conductive Grease Applied AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 53 1043 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 30V Min. 500 10 100 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 27A Min. 2 Typ. 3 0.07 Max. 4 0.08 Unit V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 15 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 42 11.2 1350 115 Max. Unit S nF pF pF Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/8 STE53NC50 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250V, ID = 26.5A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 53A, VGS = 10V Min. Typ. 46 70 310 46 150 434 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400V, ID = 53A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 45 38 85 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 53A, VGS = 0 ISD = 53A, di/dt = 100A/µs, VDD = 70V, Tj = 150°C (see test circuit, Figure 5) 760 17.86 47 Test Conditions Min. Typ. Max. 53 212 1.6 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 STE53NC50 www.DataSheet4U.com Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STE53NC50 www.DataSheet4U.com Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STE53NC50 www.DataSheet4U.com Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STE53NC50 www.DataSheet4U.com ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G O B A N D E J K L M H C F 7/8 STE53NC50.


2S15902FP E53NC50 BS-115C


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