2N5660

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·High speed switching and linear amplifier ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5660 2N5661 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2N5660 Collector-base voltage 2N5661 2N5660 VCEO VEBO IC IB PT Tj Tstg Collector-emitter voltage 2N5661 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=100 Ta=25 Open collector Open base 300 6 2.0 0.5 20 W 2 200 -65~200 V A A Open emitter 400 200 V CONDITIONS VALUE 250 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5660 IC=10mA ; IB=0 2N5661 IE=10µA ; IC=0 IC=1A; IB=0.1A IC=2A; IB=0.4A IC=1A ;IB=0.1A IC=2A; IB=0.4A VCE=200V;VBE(off)=1.5V CONDITIONS SYMBOL 2N5660 2N5661 MIN 200 TYP. MAX UNIT V(BR)CEO V 300 6 0.4 0.8 1.2 1.5 V V V V V V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Emitter-base breakdown voltage Collector-emitter saturation voltage Co...