DatasheetsPDF.com

2N5634 Dataheets PDF



Part Number 2N5634
Manufacturers SavantIC
Logo SavantIC
Description Silicon NPN Power Transistors
Datasheet 2N5634 Datasheet2N5634 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5632 VCBO Collector-base voltage 2N5633 2N5634 2N5632 VCEO Collector-.

  2N5634   2N5634



Document
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5632 VCBO Collector-base voltage 2N5633 2N5634 2N5632 VCEO Collector-emitter voltage 2N5633 2N5634 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 100 120 140 7 10 150 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5632 VCEO(SUS) Collector-emitter sustaining voltage 2N5633 2N5634 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N5632 ICEO Collector cut-off current 2N5633 2N5634 ICEV IEBO Collector cut-off current Emitter cut-off current 2N5632 hFE DC current gain 2N5633 2N5634 fT Transition frequency IC=1A ; VCE=20V IC=5A ; VCE=5V IC=7A; IB=0.7A IC=10A ;IB=2A IC=10A ;IB=2A IC=5A ; VCE=5V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 IC=0.2A ;IB=0 SYMBOL 2N5632 2N5633 2N5634 CONDITIONS MIN 100 120 140 TYP. MAX UNIT V 1.0 3.0 2.5 1.5 V V V V 1.0 mA VCE=ratedVCB; VBE(off)=1.5V TC=150 VEB=7V; IC=0 25 20 15 1.0 1.0 5.0 1.0 100 80 60 mA mA MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5632 2N5633 2N5634 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 .


2N5632 2N5634 2N5635


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)