SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2N5613 2N5615 2N5617 2...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
2N5613 2N5615 2N5617 2N5619
DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N5613 VCBO Collector-base voltage 2N5615/5617 2N5619 2N5613 VCEO Collector-emitter voltage 2N5615/5617 2N5619 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -5 50 150 -65~150 V A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5613 VCEO(SUS) Collector-emitter sustaining voltage 2N5615/5617 2N5619 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5613/5617 hFE DC current gain 2N5615/5619 2N5613/5617
2N5613 2N5615 2N5617 2N5619
SYMBOL
CONDITIONS
MIN -60
TYP.
MAX
UNIT
IC=-50mA ;IB=0
-80 -100
V
IC=-1A; IB=-0.1A IC=-2.5A ; VCE=...