SBG1040

SBG1030 thru SBG1045 www.DataSheet4U.com Low VF Schottky Barrier Rectifiers Dimensions TO-263(D2PAK) A A C A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 C Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 C(TAB) 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 SBG1030 SBG1035 SBG1040 SBG1045 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Symbol I(AV) IFSM VF IR CJ ROJC TJ TSTG Characteristics Maximum Average Forward Rectified Current @TC=95oC Maximum Ratings 10 250 0.60 @TJ=25 C @TJ=100oC o Unit A A V mA pF o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 5A DC (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range 1.0 50 280 3.0 -55 to +125 -55 to +150 C/W o o C C NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. FEATURES * Metal of silicon rectifier, majority carrier conducton * Gu...