SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 ...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-3 package ·High speed switching ·High reliability APPLICATIONS ·Switching
regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5264
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 300 180 7 7 2 87 165 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2N5264
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
180
V
VCEsat
Collector-emitter saturation voltage
IC=7A; IB=1.4A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.4A
1.2
V
ICBO
Collector cut-off current
VCB=300V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
30
300
fT
Transition frequency
IC=1A ; VCE=10V
50
MHz
2
SavantIC Semiconductor
www.Dat...