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2SK974 L , 2SK974 S
Silicon N-Channel MOS FET
Application
DPAK-1
4 4
High speed power switching
Features
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
2, 4
12
3 12 3
S type
L type
1
1. Gate 2. Drain 3. Source 4. Drain 3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW ≤ 10 µs, duty cycle ≤ 1 % Value at TC = 25 °C Symbol VDSS ...