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TC55V16256FTI-12

Toshiba Semiconductor

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS


Description
TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates fr...



Toshiba Semiconductor

TC55V16256FTI-12

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