AT49SV163DT

Features www.DataSheet4U.com Single Voltage Read/Write Operation: 1.65V to 1.95V Access Time – 80 ns Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 10 µs Fast Sector Erase Time – 100 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word in the Non-suspending Sectors by Suspending Programming of Any Other Word Low-power Operation – 10 mA Active – 15 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Write Protection and Accelerated Program Operation RESET Input for Device Initialization Sector Lockdown Support TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles Common Flash Interface (CFI) 16-megabit (1M x 16) 1.8-volt Only Flash Memory AT49SV163D AT49SV163DT 1. Description The AT49SV163D(T) is a 1.8-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-s...