DISCRETE SEMICONDUCTORS
DATA SHEET
LLE18150X NPN silicon planar epitaxial microwave power transistor
Product specificat...
DISCRETE SEMICONDUCTORS
DATA SHEET
LLE18150X
NPN silicon planar epitaxial microwave power
transistor
Product specification File under Discrete Semiconductors, SC15 September 1994
Philips Semiconductors
Philips Semiconductors
Product specification
NPN silicon planar epitaxial microwave power
transistor
FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very good stability of the characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.7 GHz and 2.0 GHz. DESCRIPTION
NPN silicon planar epitaxial microwave power
transistor in a FO-229 glued cap metal ceramic flange package, with emitter connected to flange. WARNING Product and environmental safety - toxic materials
Top view
handbook, 4 columns
LLE18150X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (A) 0.05 PL1 (W) ≥12 Gpo (dB) ≥7.8 ηC (%) typ. 43 Zi; ZL (Ω) see Figs 6 and 7
PINNING - FO-229 PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
1
c...