DISCRETE SEMICONDUCTORS
DATA SHEET
LLE16120X NPN microwave power transistor
Product specification Supersedes data of No...
DISCRETE SEMICONDUCTORS
DATA SHEET
LLE16120X
NPN microwave power
transistor
Product specification Supersedes data of November 1994 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very good stability of the characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance Internal input prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.65 GHz.
2
LLE16120X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥11 Gpo (dB) ≥8.7 Zi; ZL (Ω) see Figs 8 and 9
PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
handbook, 4 columns
1
c b
3
e
DESCRIPTION
NPN silicon planar epitaxial microwave power
transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
Top view
MAM112
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entir...