LL4448

LL4448 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard 1N4448 These diode are delivered taped. Details see “Taping”. Weight approx. : 0.05g DIMENSIONS DIM A B C inches Min. 0.134 0.055 0.008 Max. 0.142 0.059 0.016 Min. 3.4 1.40 0.2 mm Max. 3.6 1.50 0.4 Note Absolute Maximum Ratings (Ta=25 ) Symbols Values Units Reverse voltage Peak reverse voltage Rectified current (Average) Half wave rectification with Resist. Load at Tamb=25 and f 50Hz Surge forward current at t<1s and Tj=25 Power dissipation at Tamb=25 Junction Temperature Storage temperature range Note: (1) Valid provided that electrodes are kept at ambient temperature VR VRM IO IFSM Ptot Tj TS 75 100 150 1) Volts Volts mA mA mW 500 500 1) 175 -65 to +175 1 Characteristics Forward voltage at IF=5mA at IF=100mA Leakage current at VR=20V at VR=75V at VR=20V, Tj=150 Reverse breakdown voltage tested with 100uA pulses Capacitance at VF=VR=0 at Tj=25 Symbols Min. Typ. Max. Units VF VF IR IR IR V(BR)R Ctot trr RthA V 0.62 100 0.45 - 0.72 1 25 5 50 4 4 0.35 1) Volt Volt nA uA uA Volts F nS K/mW - Reverse recovery time from IF=10mA to IR=1mA, VR=6V, RL=100 Thermal resistance junction to ambient Air Rectification efficiency at f=100MHz, VRF=2V Note: (1) Valid provided that electrodes are kept at ambient temperature Rectification efficiency measurement circuit 2 RATINGS AND...