LL4154

LL4154 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Electrical data identical with the device 1N4154 Applications 94 9371 Extreme fast switchess Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV PV Tj Tstg Value 35 25 2 500 300 150 500 175 –65...+175 Unit V V A mA mA mA mW °C °C tp=1ms VR=0 Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Document Number 85560 Rev. 3, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (4) LL4154 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Test Conditions IF=30mA VR=25V VR=25V, Tj=150°C Breakdown voltage IR=5mA, tp/T=0.01, tp=0.3ms Diode capacitance VR=0, f=1MHz, VHF=50mV Reverse recovery y IF=IR=10mA, iR=1mA time IF=10mA, VR=6V, iR=0.1xIR, RL=100W Type Symbol VF IR IR V(BR) CD trr trr Min Typ Max 1 100 100 4 4 2 Unit V nA mA V pF ns ns 35 Characteristics (Tj = 25_C unless otherwise specified) 100 CD – Diode Capacitance ( pF ) I R – Reverse Current ( mA ) Scattering Limit 10 3.0 2.5 2.0 1.5 1.0 0.5 0 0 94 9154 1 0.1 VR = 25 V 0.01 40 80 120 160 200 Tj – Junction Temperature ( °C ) f = 1 MHz Tj = 25°C 0.1 1 10 100 ...