LL4148

Silicon Epitaxial Planar Diodes LL4148.LL4448 Features D Electrical data identical with the devices 1N4148 and 1N4448 respectively Applications Extreme fast switches 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions tp=1ms VR=0 Type Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol VRRM VR IFSM IFRM IF IFAV PV Tj Tstg Value 100 75 2 500 300 150 500 175 –65...+175 Unit V V A mA mA mA mW °C °C Symbol RthJA Value 500 Unit K/W TELEFUNKEN Semiconductors Rev. A2, 24-Jun-96 1 (4) LL4148.LL4448 Characteristics Tj = 25_C Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery time Test Conditions IF=5mA IF=50mA IF=...