HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER
D13001S
Characteristic/features
High breakdown voltage High current ca...
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTER
D13001S
Characteristic/features
High breakdown voltage High current capability High switching speed High reliability
Application
Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit
Description
3DD13001S is a silicon
npn power
transistor. The main process include high voltage planer process,triple difussion process and multi-surface passivation.
Absolute maximum ratings (Tc=25 )
ITEM Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Junction temperature
SYMBOL VCBO VCEO VEBO Ic Pc Tj Tstg
RATING 600 400 9 0.5 1 150
-55~+150
UNITS V V V A W
2005.02 1/6
Electrical charactristics (Tc=25 )
Item Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-base Cutoff current Collector-emitter Cutoff current Emitter-base Cutoff current DC current gain Collector-emitter Saturation voltage Base-emitter Saturation voltage
Fall time
Storage time
Transition frequency
Symbol
Testing term
V(BR)CEO Ic=10mA,IB=0
V(BR)CBO Ic=1mA,IB=0
V(BR)EBO IE=1mA,Ic=0
ICBO
VCB=580V, IE=0
ICEO
VCE=390V,IB=0
IEBO
VEB=7V, IC=0
hFE
VCE=20V, IC=20mA
VCE(sat)(1) IC=50mA, IB=5mA
VCE(sat)(2) IC=100mA, IB=10mA
VBE(sat) IC=50mA, IB=5mA
VCC=24V IC=0.1A,
tf
IB1=-IB2=0.02A
ts
VCC=24V IC=0.1A,
IB1=-IB2=0.02A
fT
VCE=10V, Ic...