STW28NK60Z

STW28NK60Z N-CHANNEL 600 V - 0.155Ω - 27A TO-247 Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STW28NK60Z s s Figure 1: Package ID 27 A PW 350 W VDSS 600 V RDS(on) < 0.185 Ω TYPICAL RDS(on) = 0.155 Ω EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED www.DataSheet4U.com s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY TO-247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MSmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES s WELDING MACHINES s LIGHTING 3 2 1 Figure 2: Internal Schematic Diagram Table 2: Order Codes PART NUMBER STW28NK60Z MARKING W28NK60Z PACKAGE TO-247 PACKAGING TUBE Rev. 1 November 2004 1/10 STW28NK60Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM(*) PTOT VESD(G-S) www.DataSheet4U.com Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 KΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) Peak Diode Recovery ...