STF21NM60ND

STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram 'ĆRUĆ7$% Features Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V RDS(on) max 0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω ID 17 A 17 A 17 A 17 A Intrinsic fast-recovery body diode Worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Applications * Switching applications Description 6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND Table 1. Device summary Marking Package 21NM60ND 21NM60ND 21NM60ND 21NM60ND D²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube March 2013 This is information on a product in full production. DocID13781 Rev 5 1/21 www.st.com 21 Contents Contents STB21NM60...