N-channel MOSFET
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET
in D²PAK, ...
Description
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
TAB
3 1
D2PAK
TAB
3 2 1
TO-220FP
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
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Features
Order codes
STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND
VDSS @ TJmax
650 V 650 V 650 V 650 V
RDS(on) max
0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω
ID
17 A 17 A 17 A 17 A
Intrinsic fast-recovery body diode Worldwide best RDS(on)*area amongst the fast
recovery diode devices
100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche
capabilities
Applications
* Switching applications
Description
6 These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
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using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND
Table 1. Device summary
Marking
Package
21NM60ND 21NM60ND 21NM60ND 21NM60ND
D²PAK TO-220FP
TO-220 TO-247
Packaging Tape and reel
Tube Tube Tube
March 2013
This is information on a product in full production.
DocID13781 Rev 5
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Contents
Contents
STB21NM60...
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