D896

Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. www.DataSheet4U.com · Goode dependence of fT on current and excellent high frequency responce. The descriptions in parentheses are for the 2SB776 only ; other descriptions than those in parentheses are common to the 2SB776 and 2SD896. Package Dimensions unit:mm 2022A [2SB776/2SD896] 3.5 15.6 14.0 2.6 3.2 4.8 2.0 1.6 2.0 20.0 0.6 1.0 1 0.6 2 3 1.3 1.2 15.0 20.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5.45 1 : Base 2 : Collector 3 ; Emitter SANYO : TO-3PB Ratings (–)120 (–)100 (–)6 (–)7 (–)11 70 150 –55 to +150 Unit V V V A A W ˚C ˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VBE VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)4A VCE=(–)5V, IC=(–)1A VCB=(–)10...