Document
SKM 100GB176D
SEMITRANS® 2 Trench IGBT Modules
SKM 100GB176D
Features
!"
# $ %
Typical Applications* &
'
()( *
)(+ &
,!
$ -
Absolute Maximum Ratings
Symbol Conditions
IGBT
%
0 .( / 0 2(+ /
.( / 3+ /
%56
%56.$%
7
2.++ 9 7 : .+ 9 0 2.( /
; 2)++
Inverse Diode
%=
0 2(+ /
.( /
3+ /
%=56
%=56.$%=
%= 6
2+ 9
-
0 2(+ /
Module
%56
0
&" 2
-
.(/"
Values
2)++ 2.( 4+ 2(+ 8 .+ 2+
2++ )+ 2(+ ).+
.++ * >+ --- ?2(+ * >+ --- ?2.(
>+++
' Units
& & & <
& & & &
& / /
Characteristics
Symbol Conditions
IGBT
7
7 " % @ &
% +
7 + "
7 2(
%
)( &" 7 2(
C7
57
'
'
50*
.(" 7 +
7*3D?2( 0 .( /
57
>". A 'D' 2#3+ &D< 57 >". A 'D' >4+ &D<
%7H
.(/"
' min. typ. max. Units
(". 0 .( / 0 .( / 0 2.( / 0 .(/ 0 2.(/ 0 .(/ 0 2.(/ -
2 6B
2.++ % )(& 0 2.( / 7*2( G .+
("3
#">
@
&
2
2".
+"4
2"2
2@
2#")
A
.+
.>
A
.
.">(
.">
."4
(")
=
+".3
=
+"..
=
#.+
3"(
E
.3+
>+
>>
F
#3+
2>+
.3"(
F
+".> IDJ
GB
1
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
SEMITRANS® 2 Trench IGBT Modules
SKM 100GB176D
Features
!"
# $ %
Typical Applications* &
'
()( *
)(+ &
,!
$ -
Characteristics
Symbol Conditions
Inverse Diode
=
%=
)( &9 7 +
0 .( / -
0 2.( / -
=+
0 .( /
0 2.( /
=
0 .( /
0 2.( /
%556 C
%= )( & 'D' 2#(+ &D<
0 2.( / G .+
7 *2( 9 2.++
50*K
''
Module
G 5L?L
-"
*
.( / 2.( /
5*
'
6
M 6#
6
6(
min.
@ ."(
typ.
2"# 2"# 2"2 +"4 #") 4"@ )3"( .4"# .2">
+")( 2
max. Units
2"4
2"4
2"@
2"2
3
A
22
A
& <
F
+">( IDJ
@+
A
A
+"+( IDJ
(
N
(
N
2#+
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
GB
2
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
SEMITRANS® 2 Trench IGBT Modules
SKM 100GB176D
Zth Symbol
Zth(j-c)l
5 5 5 5
Zth(j-c)D
5 5 5 5
Conditions
2 . @ > 2 . @ >
2 . @ > 2 . @ >
Features
!"
# $ %
Typical Applications* &
'
()( *
)(+ &
,!
$ -
Values
2#+ #+ 2#"( @"( +"2+(# +"++4 +"++22 +"+++(
.)+ 2@4 @) > +"+>)( +"+2+> +"++22 +"+++@
Units
MDJ MDJ MDJ MDJ
MDJ MDJ MDJ MDJ
GB
3
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
4
Fig. 6 Typ. gate charge characteristic
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
UL Recognized
File no. E 63 532
K #2
7H
K #2
6
28-06-2010 GIL
© by SEMIKRON
.