Power MOSFET
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(o...
Description
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ()
- 60 VGS = - 10 V
Qg (Max.) (nC)
12
Qgs (nC) Qgd (nC)
3.8 5.1
Configuration
Single
0.50
S
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
D P-Channel MOSFET
FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR9014, SiHFR9014) Straight Lead (IRFU9014, SiHFU9014) Available in Tape and Reel P-Channel Fast Switching Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252) SiHFR9014-GE3 IRFR9014PbF SiHFR9014-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR9014TRL-GE3a IRFR9014TRLPbFa SiHFR9014TL-E3a
DPAK (TO-252) SiHFR9014TR-GE3a IRFR9014TRPbFa SiHFR9014T-E3a
IPAK (TO-251) SiHFU9014-GE3 IRFU9014PbF SiHFU9014-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage...
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