SiHFU110

www.vishay.com IRFR110, SiHFR110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.3 2.3 3.8 Single 0.54 D DPAK (TO-252) D G GS S N-Channel MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR110, SiHFR110) Available in Tape and Reel Fast Switching Ease of Paralleling Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR110-GE3 IRFR110PbF SiHFR110-E3 Note a. See device orientation. DPAK (TO-252) SiHFR110TRL-GE3 IRFR110TRLPbFa SiHFR110TL-E3a DPAK (TO-252) SiHFR110TR-GE3 IRFR110TRPbFa SiHFR110T-E3a DPAK (TO-252) SiHFR110TRR-GE3 IRFR110TRRPbFa SiHFR110TR-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor (PCB Mount)...