Power MOSFET
www.vishay.com
IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (...
Description
www.vishay.com
IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
11 3.1 5.8 Single
0.20
DPAK (TO-252)
D
IPAK (TO-251)
D
GS
GD S
D
G S
N-Channel MOSFET
FEATURES Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014) Straight Lead (IRFU014, SiHFU014) Available in Tape and Reel Fast Switching Ease of Paralleling Simple Drive Requirements Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252) SiHFR014-GE3 IRFR014PbF SiHFR014-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR014TRL-GE3 IRFR014TRLPbFa SiHFR014TL-E3a
DPAK (TO-252) SiHFR014TR-GE3 IRFR014TRPbFa SiHFR014T-E3a
IPAK (TO-251) SIHFU014-GE3 IRFU014PbF SiHFU014-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Conti...
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