SI1073X

New Product Si1073X Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.173 at VGS = - 10 V 0.243 at VGS = - 4.5 V ID (A) - 0.98a - 0.83 Qg (Typ.) 3.25 FEATURES Halogen-free Option Available TrenchFET® Power MOSFET 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS www.DataSheet4U.com Load Switch SC-89 (6-LEADS) D 1 6 D S Marking Code 1 XX YY Lot Traceability and Date Code Part # Code D 2 5 D G G 3 4 S Top View D Ordering Information: Si1073X-T1-E3 (Lead (Pb)-free) Si1073X-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg Limit - 30 ± 20 - 0.98b, c - 0.78b, c -8 -6 1.8 0.2b, c 0.236b, c 0.151b, c - 55 to 150 Unit V A L = 0.1 mH TA = 25 °C TA = 25 °C TA = 70 °C mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 650 °C/W. t≤5s Steady State Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W Document Number: 74285 S-82617-Rev. C, 03-Nov-08 www.vishay.com 1...