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STDID5B Dataheets PDF



Part Number STDID5B
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STDID5B DatasheetSTDID5B Datasheet (PDF)

® STDID5B N - CHANNEL 55V - 0.1 Ω - 12A TO-252 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STDID5B www.DataSheet4U.com s TYPICAL s VDSS 55 V R DS(on) < 0.12 Ω ID 12 A s RDS(on) = 0.1 Ω APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL 1 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugge.

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® STDID5B N - CHANNEL 55V - 0.1 Ω - 12A TO-252 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STDID5B www.DataSheet4U.com s TYPICAL s VDSS 55 V R DS(on) < 0.12 Ω ID 12 A s RDS(on) = 0.1 Ω APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL 1 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS I D (* ) ID I DM ( • ) P tot EAS (1) T st g Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature (1) starting Tj = 25 oC, ID =12A , VDD = 30V o Value 55 55 ± 20 12 8 48 35 0.23 25 -65 to 175 175 Unit V V V A A A W W/ o C mJ o o C C (•) Pulse width limited by safe operating area New RDS(on) spec. starting from July ’98 May 2000 1/6 STDID5B THERMAL DATA R thj-case R thj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 4.3 100 275 o o C/W C/W o C ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol www.DataSheet4U.com Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A V GS = 0 Min. 55 Typ. Max. Unit V V (BR)DSS I DSS IGSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C 1 10 ± 100 µA µA nA ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10 V Test Conditions I D = 250 µ A I D = 9.6 A 12 Min. 2 Typ. 3 0.1 Max. 4 0.12 Unit V Ω A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 10 A V GS = 0 V Min. 4 360 55 25 Typ. Max. Unit S pF pF pF 2/6 STDID5B ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd www.DataSheet4U.com Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 30 V ID = 6 A R G = 4.7 Ω V GS = 10 V (Resistive Load, see fig. 3) V DD = 48 V I D = 12 A V GS = 10 V Min. Typ. 10 25 10 3.5 3.2 Max. Unit ns ns 13.5 nC nC nC SWITCHING OFF Symbol t d(of f) tf Parameter Turn-off Delay Time Fall Time Test Conditions V DD = 30 V ID = 6 A R G = 4.7 Ω V GS = 10 V (Resistive Load, see fig. 3) Min. Typ. 31 8 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A V GS = 0 38 61 3.2 I SD = 12 A di/dt = 100 A/ µ s V DD = 30 V T j = 150 o C (see test circuit, fig. 5) Test Conditions Min. Typ. Max. 12 48 1.3 Unit A A V ns nC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STDID5B Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform www.DataSheet4U.com Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STDID5B TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 www.DataSheet4U.com DIM. inch MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 1 0.023 0.039 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 TYP. 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 0.6 A2 B B2 C C2 D E G H L2 L4 H A C2 C DETAIL "A" A1 L2 D DETAIL "A" B = = 3 B2 = = G E 2 L4 1 = = A2 0068772-B 5/6 STDID5B www.DataSheet4U.com Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informat.


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