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MEK600-04DA

IXYS Corporation

HiPerFRED Epitaxial Diode dual diode

Advanced Technical Information HiPerFREDTM Epitaxial Diode dual diode, common cathode MEK 600-04 DA VRRM = 400 V IFAV...


IXYS Corporation

MEK600-04DA

File Download Download MEK600-04DA Datasheet


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Advanced Technical Information HiPerFREDTM Epitaxial Diode dual diode, common cathode MEK 600-04 DA VRRM = 400 V IFAVM = 880 A trr = 220 ns VRSM V 400 VRRM V 400 Type 1 2 3 1 2 3 MEK 600-04DA w w w . D a t a S h e e t 4 U . c o m Symbol IFAVM IFAVM IFSM TVJ Tstg Ptot VISOL Md a Conditions TC = 25°C; rectangular, d = 0.5 TC = 80°C; rectangular, d = 0.5 TVJ = 25°C; t = 10 ms (50 Hz), sine Maximum Ratings 880 575 tbd -40...+150 -40...+125 A A A °C °C W V~ Nm/lb.in. Nm/lb.in. m/s2 Features HiPerFREDTM diode chips - fast reverse recovery - low operating forward voltage - low leakage current - avalanche capability Industry Standard package - with isolated DCB ceramic base plate - UL registered E72873 Applications Topologies - dual diode with common cathode - high current single diode with pins 1 and 3 paralleled Circuits - free wheeling diode of choppers, H-bridges, phaselegs etc. - secondary rectifier for switched mode power supplies, welders etc. Dimensions in mm (1 mm = 0.0394") TC = 25°C 50/60 Hz, RMS; IISOL ≤ 1 mA Mounting torque with screw M5 Terminal connection torque Allowable acceleration 1100 3600 2.25-2.75/20-25 4.5-5.5/40-48 50 Symbol IR VF trr IRM RthJS RthJC dS dA Weight Conditions min. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM IF = 400 A; TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 6 6 1.1 1.4 220 80 0.11 0.22 mA mA V V ns A K/W K/W mm mm 150 g VR = 100 V; -diF/dt = 900 A/µs IF = 400 A; TVJ = 125°C Creeping distance on surf...




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