SiHFP31N50L

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 210 58 100 Single 0.15 TO-247AC D G S D G ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET SnPb FEATURES Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Available Lower Gate Charge Results in Simpler Drive RoHS* Requirements COMPLIANT Enhanced dV/dt Capabilities Offer Improved Ruggedness Higher Gate Voltage Threshold Offers Improved Noise Immunity Compliant to RoHS Directive 2002/95/EC APPLICATIONS Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control Applications TO-247AC IRFP31N50LPbF SiHFP31N50L-E3 IRFP31N50L SiHFP31N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Sta...