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SiHFL014 Dataheets PDF



Part Number SiHFL014
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFL014 DatasheetSiHFL014 Datasheet (PDF)

www.vishay.com IRFL014, SiHFL014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.20 D SOT-223 D S D G Marking code: FA G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Fast switching • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?9.

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www.vishay.com IRFL014, SiHFL014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.20 D SOT-223 D S D G Marking code: FA G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Fast switching • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. SOT-223 SiHFL014-GE3 IRFL014PbF SiHFL014-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor (PCB Mount) e Single Pulse Avalanche Energy b Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) e Peak Diode Recovery dV/dt c TC = 25 °C TA = 25 °C EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 2.7 A (see fig. 12). c. ISD  10 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). SOT-223 SiHFL014TR-GE3 a IRFL014TRPbF a SiHFL014T-E3 a LIMIT 60 ± 20 2.7 1.7 22 0.025 0.017 100 3.1 2.0 4.5 -55 to +150 300 UNIT V A W/°C mJ W V/ns °C S14-1685-Rev. E, 18-Aug-14 1 Document Number: 91191 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRFL014, SiHFL014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient  (PCB Mount)a RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). MIN. - TYP. - MAX. 60 40 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source B.


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