www.vishay.com
IRFL014, SiHFL014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
11 3.1 5.8 Single
0.20
D
SOT-223 D
S D G
Marking code: FA
G
S N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Fast switching
• Ease of paralleling
• Simple drive requirements
Available
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
SOT-223 SiHFL014-GE3
IRFL014PbF SiHFL014-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Linear Derating Factor (PCB Mount) e
Single Pulse Avalanche Energy b Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) e Peak Diode Recovery dV/dt c
TC = 25 °C TA = 25 °C
EAS PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 2.7 A (see fig. 12). c. ISD 10 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
SOT-223 SiHFL014TR-GE3 a
IRFL014TRPbF a SiHFL014T-E3 a
LIMIT 60 ± 20 2.7 1.7 22
0.025 0.017 100
3.1 2.0 4.5 -55 to +150 300
UNIT V
A
W/°C mJ W V/ns °C
S14-1685-Rev. E, 18-Aug-14
1
Document Number: 91191
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRFL014, SiHFL014
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB Mount)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN. -
TYP. -
MAX. 60 40
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static Drain-Source B.