SiHFI9634G

IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 250 VGS = - 10 V 38 8.0 18 Single S FEATURES 1.0 www.DataSheet4U.com TO-220 FULLPAK Advanced Process Technology Dynamic dV/dt Rating 150 °C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead (Pb)-free Available RoHS COMPLIANT DESCRIPTION G D G D S P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFI9634GPbF SiHFI9634G-E3 IRFI9634G SiHFI9634G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating ...