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SiHFI740G Dataheets PDF



Part Number SiHFI740G
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFI740G DatasheetSiHFI740G Datasheet (PDF)

www.vishay.com IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 66 10 33 Single 0.55 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available • Sink to lead creepage distance = 4.8 mm Available • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance pl.

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www.vishay.com IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 66 10 33 Single 0.55 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available • Sink to lead creepage distance = 4.8 mm Available • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 , IAS = 5.4 A (see fig. 12). c. ISD  10 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 400 ± 20 5.4 3.4 22 0.32 390 5.4 4.0 40 4.0 -55 to +150 300 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m S16-0763-Rev. C, 02-May-16 1 Document Number: 91156 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRFI740G, SiHFI740G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) RthJA RthJC TYP. - MAX. 65 3.1 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, .


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