www.vishay.com
IRFI740G, SiHFI740G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
400 VGS = 10 V
66 10 33 Single
0.55
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
FEATURES
• Isolated package
• High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
Available
• Sink to lead creepage distance = 4.8 mm
Available
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
TO-220 FULLPAK IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 , IAS = 5.4 A (see fig. 12). c. ISD 10 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
LIMIT 400 ± 20 5.4 3.4 22 0.32 390 5.4 4.0 40 4.0
-55 to +150 300 10 1.1
UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
S16-0763-Rev. C, 02-May-16
1
Document Number: 91156
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRFI740G, SiHFI740G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)
RthJA RthJC
TYP. -
MAX. 65 3.1
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, .