SiHFIB5N50L

IRFIB5N50L, SiHFIB5N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 45 13 23 Single D FEATURES 500 0.67 Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Lower Gate Charge Results in Simpler Drive Reqirements RoHS COMPLIANT Enhanced dV/dt Capabilities Offer Improved Ruggedness Higher Gate Voltage Threshold Offers Improved Noise Immunity Lead (Pb)-free www.DataSheet4U.com TO-220 FULLPAK APPLICATIONS G Zero Voltage Switching SMPS Telecom and Server Power Supplies G D S S N-Channel MOSFET Uninterruptible Power Supplies Motor Control Applications ORDERING INFORMATION Package Lead (Pb)-free TO-220 FULLPAK IRFIB5N50LPbF SiHFIB5N50L-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 ± 30 4.7 3.0 16 0.33 140 4.0 3.0 42 13 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited b...