SiHFD9210

IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com - 200 VGS = - 10 V 8.9 2.1 3.9 Single S FEATURES Dynamic dV/dt Rating 3.0 Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel Fast Switching Ease of Paralleling Lead (Pb)-free Available Available RoHS* COMPLIANT HEXDIP G DESCRIPTION The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb HEXDIP IRFD9210PbF SiHFD9210-E3 IRFD9210 SiHFD9210 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for ...