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SiHFI614G
Power MOSFET
Description
IRFI614G, SiHFI614G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.8 4.5 Single D FEATURES 250 2.0 Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Dynamic dV/dt Rating Low Thermal Resistance Lead ...
Vishay Siliconix
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SiHFI614G
Power MOSFET
- Vishay Siliconix
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