SiHFD9220

IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com - 200 VGS = - 10 V 15 3.2 8.4 Single S FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated 1.5 Available For Automatic Insertion End Stackable P-Channel Fast Switching Ease of Paralleling Lead (Pb)-free Available RoHS* COMPLIANT HEXDIP G DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb HEXDIP IRFD9220PbF SiHFD9220-E3 IRFD9220 SiHFD9220 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya TC = 25 °C Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 1...