Document
IRFD224, SiHFD224
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 2.7 7.8 Single
D
FEATURES
250 1.1
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Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free
RoHS
COMPLIANT
HEXDIP
DESCRIPTION
G
S D
G S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serveres as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package Lead (Pb)-free HEXDIP IRFD224PbF SiHFD224-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM Energyb LIMIT 250 ± 20 0.63 0.40 5.0 0.0083 EAS IAR Energya TC = 25 °C EAR PD dV/dt TJ, Tstg for 10 s 60 0.63 0.10 1.0 4.8 - 55 to + 150 300d W/°C mJ A mJ W V/ns °C A UNIT V
Linear Derating Factor Single Pulse Avalanche Avalanche Currenta Repetitive Avalanche
Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 15 mH, RG = 25 Ω, IAS = 2.5 A (see fig. 12). c. ISD ≤ 4.4 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case.
Document Number: 91132 S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
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IRFD224, SiHFD224
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient SYMBOL RthJA TYP. MAX. 120 UNIT °C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage www.DataSheet4U.com Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs
VGS = 0 V, ID .