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SiHFD224 Dataheets PDF



Part Number SiHFD224
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFD224 DatasheetSiHFD224 Datasheet (PDF)

IRFD224, SiHFD224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 2.7 7.8 Single D FEATURES 250 1.1 www.DataSheet4U.com • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free RoHS COMPLIANT HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide .

  SiHFD224   SiHFD224



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IRFD224, SiHFD224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 2.7 7.8 Single D FEATURES 250 1.1 www.DataSheet4U.com • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free RoHS COMPLIANT HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serveres as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free HEXDIP IRFD224PbF SiHFD224-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM Energyb LIMIT 250 ± 20 0.63 0.40 5.0 0.0083 EAS IAR Energya TC = 25 °C EAR PD dV/dt TJ, Tstg for 10 s 60 0.63 0.10 1.0 4.8 - 55 to + 150 300d W/°C mJ A mJ W V/ns °C A UNIT V Linear Derating Factor Single Pulse Avalanche Avalanche Currenta Repetitive Avalanche Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 15 mH, RG = 25 Ω, IAS = 2.5 A (see fig. 12). c. ISD ≤ 4.4 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. Document Number: 91132 S-Pending-Rev. A, 23-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRFD224, SiHFD224 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL RthJA TYP. MAX. 120 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage www.DataSheet4U.com Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID .


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