SiHFD210

IRFD210, SiHFD210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.8 4.5 Single D FEATURES 200 1.5 www.DataSheet4U.com Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free SnPb HEXDIP IRFD210PbF SiHFD210-E3 IRFD210 SiHFD210 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM Energyb LIMIT 200 ± 20 0.60 0.38 4.8 0.0083 EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 79 0.60 0.10 1.0 5.0 - 55 to + 150 300d W/°C mJ A mJ W V/ns °C A UNIT V Linear Derating Factor Single Pulse Avalanche Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissi...