SiHFD110

IRFD110, SiHFD110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.3 2.3 3.8 Single D FEATURES 100 0.54 Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175 °C Operating Temperature Fast Switching and Ease of Paralleling Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free SnPb HEXDIP IRFD110PbF SiHFD110-E3 IRFD110 SiHFD110 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM Energyb EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s LIMIT 100 ± 20 1.0 0.71 8.0 0.0083 140 1.0 0.13 1.3 5.5 - 55 to + 175 300d W/°C mJ A mJ W V/ns °C A UNIT V Linear Derating Factor Single Pulse Avalanche Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power D...