Power MOSFET
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (n...
Description
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 31 4.6 17 Single
D
FEATURES
600 2.2
Surface Mount (IRFBC30S, SiHFBC30S) Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating 150 °C Operating Temperature Fast Switching Fully Avalanche Rated Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
I2PAK (TO-262) D2PAK (TO-263)
G G D S S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications.
ORDERING INFORMATION
Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRFBC30SPbF SiHFBC30S-E3 IRFBC30S SiHFBC30S D2PAK (TO-263) IRFBC30STRLPbFa SiHFBC30STL-E3a I2PAK (TO-262) IRFBC30LPbF SiHFBC30L-E3 IRFBC30L SiHFBC30L
ABSOLUTE MAXIM...
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