Document
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
23 5.4 11 Single
I2PAK (TO-262) D2PAK (TO-263)
2.2
D
G D S
G
S N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Low Gate Charge Qg Results in Simple Drive
Requirement • Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching
TYPICAL SMPS TOPOLOGIES • Single Transistor Flyback
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFBC30AS-GE3
Lead (Pb)-free
IRFBC30ASPbF SiHFBC30AS-E3
Note a. See device orientation.
D2PAK (TO-263) SiHFBC30ASTRL-GE3a IRFBC30ASTRLPbFa SiHFBC30ASTL-E3a
D2PAK (TO-263) SiHFBC30ASTRR-GE3a IRFBC30ASTRRPbFa SiHFBC30ASTR-E3a
I2PAK (TO-262) SiHFBC30AL-GE3 IRFBC30ALPbF SiHFBC30AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 46 mH, Rg = 25 , IAS = 3.6 A (see fig. 12). c. ISD 3.6 A, dI/dt 170 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. Uses IRFBC30A/SiHFBC30A data and test conditions.
LIMIT 600 ± 30 3.6 2.3 14 0.69 290 3.6 7.4 74 7.0
- 55 to + 150 300d
UNIT V
A
W/°C mJ A mJ W V/ns °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91109 S11-1052-Rev. C, 30-May-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP. -
MAX. 40 1.7
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.2 Ab
VDS = 50 V, ID = 2.2 A
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
Output Capacitance
Coss
Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics
Coss eff. Qg Qgs Qgd td(on) tr td(off) tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz VDS = 480 V, f = 1.0 MHz
VDS = 0 V to 480 Vc
VGS = 10 V
ID = 3.6 A, VDS = 480 V, see fig. 6 and 13b
VDD = 300 V, ID = 3.6 A, Rg = 12 , RD = 82 , see fig. 10b, d
MIN.
600 -
2.0 -
2.1
-
TYP. MAX. UNIT
- -V 0.67 - V/°C
- 4.5 V - ± 100 nA - 25
μA - 250 - 2.2 - -S
510 70 3.5 -
pF 730 19 31 -
- 23 - 5.4 nC - 11 9.8 13 -
ns 19 12 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
Pulsed Diode Forward Currenta
integral reverse ISM p - n junction diode
D
G S
- - 3.6 A
- - 14
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb,
-
400 600 ns
Qrr - 1.1 1.7 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. d. Uses IRFBC30A/SiHFBC30A data and test conditions.
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Document Number: 91109 S11-1052-Rev. C, 30-May-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT w.