DatasheetsPDF.com

SiHFBC30AS Dataheets PDF



Part Number SiHFBC30AS
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFBC30AS DatasheetSiHFBC30AS Datasheet (PDF)

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 23 5.4 11 Single I2PAK (TO-262) D2PAK (TO-263) 2.2 D G D S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Cur.

  SiHFBC30AS   SiHFBC30AS


Document
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 23 5.4 11 Single I2PAK (TO-262) D2PAK (TO-263) 2.2 D G D S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Single Transistor Flyback ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBC30AS-GE3 Lead (Pb)-free IRFBC30ASPbF SiHFBC30AS-E3 Note a. See device orientation. D2PAK (TO-263) SiHFBC30ASTRL-GE3a IRFBC30ASTRLPbFa SiHFBC30ASTL-E3a D2PAK (TO-263) SiHFBC30ASTRR-GE3a IRFBC30ASTRRPbFa SiHFBC30ASTR-E3a I2PAK (TO-262) SiHFBC30AL-GE3 IRFBC30ALPbF SiHFBC30AL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 46 mH, Rg = 25 , IAS = 3.6 A (see fig. 12). c. ISD  3.6 A, dI/dt  170 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. Uses IRFBC30A/SiHFBC30A data and test conditions. LIMIT 600 ± 30 3.6 2.3 14 0.69 290 3.6 7.4 74 7.0 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91109 S11-1052-Rev. C, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). TYP. - MAX. 40 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0, ID = 250 μA Reference to 25 °C, ID = 1 mAd VDS = VGS, ID = 250 μA VGS = ± 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 2.2 Ab VDS = 50 V, ID = 2.2 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Output Capacitance Coss Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V VDS = 1.0 V, f = 1.0 MHz VDS = 480 V, f = 1.0 MHz VDS = 0 V to 480 Vc VGS = 10 V ID = 3.6 A, VDS = 480 V, see fig. 6 and 13b VDD = 300 V, ID = 3.6 A, Rg = 12 , RD = 82 , see fig. 10b, d MIN. 600 - 2.0 - 2.1 - TYP. MAX. UNIT - -V 0.67 - V/°C - 4.5 V - ± 100 nA - 25 μA - 250 - 2.2  - -S 510 70 3.5 - pF 730 19 31 - - 23 - 5.4 nC - 11 9.8 13 - ns 19 12 - Continuous Source-Drain Diode Current IS MOSFET symbol showing the Pulsed Diode Forward Currenta integral reverse ISM p - n junction diode D G S - - 3.6 A - - 14 Body Diode Voltage VSD TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb - - 1.6 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb, - 400 600 ns Qrr - 1.1 1.7 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. d. Uses IRFBC30A/SiHFBC30A data and test conditions. www.vishay.com 2 Document Number: 91109 S11-1052-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT w.


SiHFBC30AL SiHFBC30AS SiHFBC30L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)