SiHFB17N50L

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 130 33 59 Single 0.28 D TO-220AB G S D G ORDERING INFORMATION Package Lead (Pb)-free SnPb S N-Channel MOSFET FEATURES Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Low trr and Soft Diode Recovery Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters TO-220AB IRFB17N50LPbF SiHFB17N50L-E3 IRFB17N50L SiHFB17N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 3.0 mH, Rg = ...