SiHFB16N60L

IRFB16N60L, SiHFB16N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 100 30 46 Single D FEATURES 600 0.385 Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Lower Gate Charge Results in Simpler Drive Requirements Available RoHS* COMPLIANT Enhanced dV/dt Capabilities Offer Improved Ruggedness Higher Gate Voltage Threshold Offers Improved Noise Immunity Lead (Pb)-free Available TO-220 APPLICATIONS G Zero Voltage Switching SMPS Telecom and Server Power Supplies S N-Channel MOSFET S G D Uninterruptible Power Supplies Motor Control Applications ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFB16N60LPbF SiHFB16N60L-E3 IRFB16N60L SiHFB16N60L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 600 ± 30 16 10 60 2.5 310 16 31 310 10 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetiti...