Document
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
400 VGS = 10 V
36 9.9 16 Single
I2PAK (TO-262)
D2PAK (TO-263)
0.55 D
G
DS G
D S
G
S N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Low Gate Charge Qg Results in Simple Drive
Requirement • Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness • Fully Characterized Capacitance and
Avalanche Voltage and Current • Effective Coss specified • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High speed Power Switching
TYPICAL SMPS TOPOLOGIES • Single Transistor Flyback Xfmr. Reset • Single Transistor Forward Xfmr. Reset (Both for US Line
Input Only)
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF740AS-GE3
Lead (Pb)-free
IRF740ASPbF SiHF740AS-E3
Note a. See device orientation.
D2PAK (TO-263) SiHF740ASTRL-GE3a IRF740ASTRLPbFa SiHF740ASTL-E3a
D2PAK (TO-263) SiHF740ASTRR-GE3a IRF740ASTRRPbFa SiHF740ASTR-E3a
I2PAK (TO-262) SiHF740AL-GE3 IRF740ALPbF SiHF740AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente Pulsed Drain Currenta, e
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation Peak Diode Recovery dV/dtc, e
TA = 25 °C TC = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
VDS VGS
ID
IDM
EAS IAR EAR
PD
dV/dt TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 12.6 mH, Rg = 25 , IAS = 10 A (see fig. 12). c. ISD 10 A, dI/dt 330 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
e. Uses IRF740A, SiHF740A data and test conditions.
LIMIT
400 ± 30 10 6.3 40 1.0 630 10 12.5 3.1 125 5.9 - 55 to + 150 300d
UNIT V
A
W/°C mJ A mJ W V/ns °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91052 S11-1048-Rev. C, 30-May-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB Mounted, Steady-State)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP. -
MAX. 40 1.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6.0 Ab
VDS = 50 V, ID = 6.0 Ad
400 -
-V
- 0.48 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
- - 0.55
4.9 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
Output Capacitance
Coss
Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics
Coss eff. Qg Qgs Qgd td(on) tr td(off) tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5d
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz VDS = 320 V, f = 1.0 MHz
VDS = 0 V to 320 Vc, d
VGS = 10 V
ID = 10 A, VDS = 320 V, see fig. 6 and 13b, d
VDD = 200 V, ID = 10 A, Rg = 10 , RD = 19.5 , see fig. 10b, d
-
1030 170 7.7 1490 52 61
10 35 24 22
36 9.9 16 -
pF nC ns
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
Pulsed Diode Forward Currenta
integral reverse ISM p - n junction diode
D
G S
- - 10 A
- - 40
Body Diode Voltage
VSD
TJ = 25 °C, IS = 10 A, VGS = 0 Vb
- - 2.0 V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb, d
-
240 360 ns
Qrr - 1.9 2.9 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. d. Uses IRF740A, SiHF740A data and test conditions.
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Document Number: 91052 S11-1048-Rev. C, 30-May-11
This document is subject to change without.