SDRAM DIMM
M366S0823FTS
M366S0823FTS SDRAM DIMM
PC133/PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3...
Description
M366S0823FTS
M366S0823FTS SDRAM DIMM
PC133/PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823FTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823FTS consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. One 0.1uF and one 0.33 uF decoupling capacitors are mounted on the printed circuit board in parallel for each www.DataSheet4U.com SDRAM. The M366S0823FTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURE
Performance range Part No. Max Freq. (Speed) M366S0823FTS-C7A 133MHz (7.5ns @ CL=3) M366S0823FTS-C1H 100MHz (10ns @ CL=2) M366S0823FTS-C1L 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the pos...
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